Executive Committee
| General Chair | David Sheridan Alpha & Omega Semiconductor, USA |
| Past General Chair | Wai Tung Ng University of Toronto, Canada |
| Technical Program Chair | Sameh Khalil Infineon, USA |
| Treasurer | Sameer Pendharkar Texas Instruments, USA |
| Publications Chair | Andy Ritenour Western Carolina University, USA |
| Short Courses Chair | Victor Veliadis North Carolina State University, USA |
| Exhibition Chair | Pete Losee Onsemi, USA |
| Webmaster | Hélène Ma Yang University of Toronto, Canada |
Technical Program Committee
Category 1: High Voltage Power Devices (HV)
Chair: Karthik Padmanabhan, Alpha and Omega Semiconductor, USA
Umamaheswara Reddy Vemulapati, Hitachi Energy, Switzerland
Ayanori Gatto, Mitsubishi Electric, Japan
Yusuke Yamashita, Toyota Central R&D Labs, Japan
Wentao Yang, Huawei Technologies, China
Tanya Trajković, Camutronics, UK
Craig Fisher, Vishay, UK
Ming Qiao, University of Electronic Science and Technology of China, China
Kota Ohi, Fuji Electric, Japan
Category 2: Low Voltage Devices and Power IC Technology (LVT)
Chair: Xin Lin, NXP Semiconductors, USA
Yusuke Kobayashi, Toshiba Electronic Devices & Storage, Japan
Raffaella Roggero, STMicroelectronics, Italy
Jaehyun Yoo, Nexperia, UK
Steven Thomas Peake, Nexperia, UK
KwangYoung Ko, DB HiTek, Korea
Tanuj Saxena, onsemi, USA
Kuo-Ming Wu, TSMC, Taiwan
Atsushi Sakai, Renesas Electronics, Japan
Category 3: Power IC Design (ICD)
Chair: Wei-Jia Zhang, HKUST, Hong Kong
Jingshu Yu, Intel, USA
Bruno Allard, INSA Lyon, Ampère-lab, France
Christophe Tourniol, STMicroelectronics, France
Siyang Liu, Southeast University, China
Dev Alok Girdhar, Renesas Electronics America, USA
Makoto Takamiya, The University of Tokyo, Japan
Leon Meng Wang, Omnivision Semiconductor, China
Category 4: GaN and Compound Materials: Device and technology (GaN)
Chair: Dong Seup Lee, Texas Instruments, USA
Lan Wei, University of Waterloo, Canada
Oliver Hilt, Ferdinand-Braun-Institut, Berlin, Germany
Akira Nakajima, AIST, Japan
Hiroyuki Handa, Panasonic Holdings, Japan
Benoit Bakeroot, IMEC and Ghent University, Belgium
Robert Kaplar, Sandia National Laboratory, USA
Na Ren, Zhejiang University, China
Roy K.-Y. Wong, National Tsing Hua University, Taiwan
Shyh-Chiang Shen, Vanguard International Semiconductor Corp., Taiwan
Hong Zhou, Xidian University, China
Grace Xing, Cornell University, USA
Yasuhiro Uemoto, Infineon Technologies, Jaspan
Category 5: SiC and Other Materials (SiC)
Chair: Alexander Bolotnikov, Toshiba Electronic Devices & Storage, Japan
Jeff Joohyung Kim, Wolfspeed, USA
Song Bai, Nanjing Electronic Device Institute, China
Ivana Kovacevic, ETH Zurich, Switzerland
Teruyuki Ohashi, Toshiba Electronic Devices & Storage, Japan
Takaaki Tominaga, Mitsubishi Electric, Japan
Rudolf Elpelt, Infineon Technologies AG, Germany
hul Potera, Alpha & Omega Semiconductor, USA
Haruka Shimizu, Hitachi, Japan
Shinsuke Harada, AIST, Japan
Kung-Yen Lee, National Taiwan University, Taiwan
Michele Riccio, University of Naples Federico II, Italy
Cheng-Tyng Yen, Fast SiC Semiconductor, Taiwan
Category 6: Module and Package Technologies (PK)
Chair: Emre Gurpinar, Sikorsky Aircraft, USA
Koji Nishi, Ashikaga University, Japan
Xavier Jorda, IMB-CNM, Spain
Chris Bailey, Arizona State University, USA
Makoto Shibuya, Texas Instruments, Japan
Stefan Oehling, Semikron-Danfoss, Germany
Elena Mengotti, ABB Research Center, Switzerland
Han Peng, Hauzhong University of Science and Technology Wuhan, China
